This work provides a novel method to solve the effective mass Schrödinger equation, which is for the first time free of unphysical solutions. This allows the accurate calculation of the electronic structure in semiconductor nanostructures in electric and magnetic fields, which was not possible before. The application to InGaAs/GaAs quantum dots leads to the prediction of the field-dependent exciton energy, in particular of the linear and non-linear Zeeman splitting. Moreover, a design for a universal qubit gate is proposed.
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This work provides a novel method to solve the effective mass Schrödinger equation, which is for the first time free of unphysical solutions. This allows the accurate calculation of the electronic structure in semiconductor nanostructures in electric and magnetic fields, which was not possible before. The application to InGaAs/GaAs quantum dots leads to the prediction of the field-dependent exciton energy, in particular of the linear and non-linear Zeeman splitting. Moreover, a design for a univ...
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