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- Title:
Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices
- Document type:
- Konferenzbeitrag
- Contribution type:
- Poster
- Author(s):
- Tallarida, G.; Huby, N.; Kutrzeba-Kotowska, B.; Spiga, S.; Lugli, P.; Csaba, G.; Arcari, M.; Guziewicz, E.; Godlewsk, M.
- Abstract:
- ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
- Book / Congress title:
- MRS 09 – Spring Meeting Memory Workshop, 2009. IMW '09. IEEE International
- Congress (additional information):
- Monterey CA USA, April 13-17, 2009
- Publisher:
- IEEE Xplore Digital Library
- Year:
- 2009
- Quarter:
- 2. Quartal
- Year / month:
- 2009-04
- Month:
- May
- Language:
- en
- Fulltext / DOI:
- doi:10.1109/IMW.2009.5090598
- WWW:
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5090598
- Format:
- Text
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