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Title:

Analytical Model of Trapping Effects in Organic Thin-Film Transistors

Document type:
Zeitschriftenaufsatz
Author(s):
Erlen, C.; Lugli, P.
Abstract:
We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided
Journal title:
Electron Devices, IEEE Transactions on (Volume:56 , Issue: 4 )
Year:
2009
Year / month:
2009-04
Quarter:
2. Quartal
Month:
Apr
Pages contribution:
546-552
Language:
en
Fulltext / DOI:
doi:10.1109/TED.2008.2011936
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4787030
Publisher:
IEEE Xplore Digital Library
Print-ISSN:
0018-9383
Format:
Text
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