Analytical Model of Trapping Effects in Organic Thin-Film Transistors
Document type:
Zeitschriftenaufsatz
Author(s):
Erlen, C.; Lugli, P.
Abstract:
We report an analytical model for organic thin-film transistors that accounts for the influence of trap states
on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is
used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided
Journal title:
Electron Devices, IEEE Transactions on (Volume:56 , Issue: 4 )