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- Title:
Tuning the polarity of Si-nanowire transistors without the use of doping
- Document type:
- Konferenzbeitrag
- Author(s):
- Weber, WM.; Geelhaar, L.; Lamagna, L.; Fanciulli, M., Kreupl, F.; Unger, E.; Riechert, H.; Scarpa, G.; Lugli, P.
- Abstract:
- In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts. (2 References).
- Book / Congress title:
- 2008 8th IEEE Conference on Nanotechnology (NANO). IEEE.
- Congress (additional information):
- Arlington TX USA, Aug 18 - 21, 2008
- Year:
- 2008
- Quarter:
- 3. Quartal
- Year / month:
- 2008-08
- Month:
- Aug
- Pages:
- 580-581
- Language:
- en
- Fulltext / DOI:
- doi:10.1109/NANO.2008.171
- WWW:
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4617153
- Format:
- Text
BibTeX