The continuous performance improvement of integrated circuits, which is mostly achieved by scaling MOSFETs, is going to face its physical limit in the forthcoming years. The tunneling field effect transistor (TFET) is a novel device that could possibly replace MOSFETs. Its working principle is based on quantum mechanical interband tunneling. This work describes the fabrication and characterization of TFETs with ultra-short channel lengths. For fabricating these TFETs, the so called spacer-gate technology was developed, which is a planar and self-aligning process. Thereby, the evaluation of the TFET of being a MOSFET successor was extended substantially. Potential applications of tunneling field effect transistors are low power devices such as memory products and mobile applications.
«
The continuous performance improvement of integrated circuits, which is mostly achieved by scaling MOSFETs, is going to face its physical limit in the forthcoming years. The tunneling field effect transistor (TFET) is a novel device that could possibly replace MOSFETs. Its working principle is based on quantum mechanical interband tunneling. This work describes the fabrication and characterization of TFETs with ultra-short channel lengths. For fabricating these TFETs, the so called spacer-gate t...
»