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Title:

A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650 V GaN dies

Document type:
Konferenzbeitrag
Contribution type:
Textbeitrag / Aufsatz
Author(s):
Dechant, E.; Seliger, N.; Kennel, R.
Abstract:
This paper proposes an ultra-low inductance halfbridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop,...     »
Book / Congress title:
Proceeding of the 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP2019)
Date of congress:
Apr 24, 2019 - Apr 26, 2019
Year:
2019
Quarter:
2. Quartal
Year / month:
2019-04
Month:
Apr
Reviewed:
ja
Language:
en
Semester:
SS 19
TUM Institution:
Lehrstuhl für Elektrische Antriebssysteme und Leistungselektronik
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