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Title:

Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy

Document type:
Zeitschriftenaufsatz
Author(s):
Ruhstorfer, Daniel; Döblinger, Markus; Riedl, Hubert; Finley, Jonathan J.; Koblmüller, Gregor
Journal title:
Journal of Applied Physics
Year:
2022
Journal volume:
132
Journal issue:
20
Fulltext / DOI:
doi:10.1063/5.0124808
Publisher:
AIP Publishing
E-ISSN:
0021-89791089-7550
Date of publication:
22.11.2022
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