- Titel:
Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy
- Dokumenttyp:
- Zeitschriftenaufsatz
- Autor(en):
- Ruhstorfer, Daniel; Döblinger, Markus; Riedl, Hubert; Finley, Jonathan J.; Koblmüller, Gregor
- Zeitschriftentitel:
- Journal of Applied Physics
- Jahr:
- 2022
- Band / Volume:
- 132
- Heft / Issue:
- 20
- Volltext / DOI:
- doi:10.1063/5.0124808
- Verlag / Institution:
- AIP Publishing
- E-ISSN:
- 0021-89791089-7550
- Publikationsdatum:
- 22.11.2022
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