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- Title:
Memory cell with resistance-switching layers
- Document type:
- Patent
- Patent number:
- US 8737111 B2
- Inventor:
- Kreupl; Franz (Munchen, DE), Costa; Xiying (San Jose, CA), Kai; James (Santa Clara, CA), Makala; Raghuveer S. (Sunnyvale, CA)
- Assignee:
- Kreupl; Franz (Munchen, DE), Costa; Xiying (San Jose, CA), Kai; James (Santa Clara, CA), Makala; Raghuveer S. (Sunnyvale, CA)
- Patent office:
- US
- Publication date patent:
- 27.05.2014
- Year:
- 2014
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX