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Title:

Technology and Circuit Optimization of Resistive RAM for Low-Power, Reproducible Operation

Document type:
Konferenzbeitrag
Contribution type:
Elektronisches Dokument
Author(s):
D. Sekar, B. Bateman, U. Raghuram, S. Bowyer, *Y. Bai, M. Calarrudo, P. Swab, J. Wu, S. Nguyen, N. Mishra, R. Meyer, M. Kellam, B. Haukness, C. Chevallier, * H. Wu, * H. Qian, ** F. Kreupl and G. Bronner
Abstract:
or Resistive RAM (RRAM), reproducibility in large arrays requires control of capacitive surge currents during programming. In this work, we present results from a 256kb RRAM chip which demonstrate how device optimization in conjunction with innovative circuits can control surge currents due to inherent cell and array parasitics. We propose a fab-friendly TiN/conductive TaOx/HfO2/TiN bi-layer RRAM that gives 2x lower power and improves variability and switching yield compared to conventional HfO2...     »
Editor:
IEEE
Book / Congress title:
IEDM
Congress (additional information):
International Electron Devices Meeting (IEDM)
Organization:
IEEE
Date of congress:
15.12.2014
Publisher:
IEEE
Date of publication:
15.12.2014
Year:
2014
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
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