SrTiO 3 for sub-20 nm DRAM technology nodes—characterization and modeling

The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors with strontium titanate and ruthenium electrodes. • EOT = 0.38 nm @ 0 V and current density 10−7 A cm−2 @ ±1 V and 25 °C. • J–V and C–V behavior modeled with defects and multi-phonon trap-assisted-tunneling. • Relaxation measurement indicate charge loss of 6.5% @ 1 s and 25 °C.     «

The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors with...     »