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Titel:

SrTiO 3 for sub-20 nm DRAM technology nodes—characterization and modeling

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Vortrag / Präsentation
Autor(en):
Kaczer, B.; Larcher, L.; Vandelli, L.; Reisinger, H.; Popovici, M.; Clima, S.; Ji , Z.; Joshi, S.; Swerts, J.; Redolfi, A.; Afanas’ev, V.V.; Jurczak, M.
Abstract:
The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors with...     »
Stichworte:
Dopamine, Carbon nanotubes, flexible, Solution processable, electrolyte gate
Kongress- / Buchtitel:
SISC 2014 45 th IEEE Semiconductor Interface Specialists Conference, Session 12 - Memory Session Chair: M. Passlack 12.3
Kongress / Zusatzinformationen:
San Diego CA USA, 10-13 Dec 2014 2014-12
Verlag / Institution:
IEEE Xplore Digital Library
Jahr:
2014
Quartal:
4. Quartal
Jahr / Monat:
2014-12
Monat:
Dec
Sprache:
en
WWW:
http://www.ieeesisc.org/programs/2014_SISC_technical_program.pdf
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