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Title:

Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces

Document type:
Zeitschriftenaufsatz
Author(s):
Bora, A.; Pathak, A.; Liao, K.C.; Vexler, M.I.; Kuligk, A.; Cattani-Scolz, A.; Meinerzhagen, B.; Abstreiter, G.; Schwartz, J.; Tornow, M.
Abstract:
We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1–1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by...     »
Keywords:
Self assembly Tunneling Monolayers Negative resistance Semiconductor growth
Journal title:
Appl. Phys. Lett. 102, 241602 (2013) 2013-06
Year:
2013
Year / month:
2013-06
Quarter:
2. Quartal
Month:
Jun
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:10.1063/1.4811441
WWW:
http://scitation.aip.org/content/aip/journal/apl/102/24/10.1063/1.4811441
Publisher:
AIP Publishing LLC
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