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Title:

Hall Effect and Magnetoresistance in {{MnSi}}

Document type:
Zeitschriftenaufsatz
Author(s):
Neubauer, A.; Pfleiderer, C.; Ritz, R.; Niklowitz, P. G.; B̈oni, P.
Abstract:
We report the transverse magnetoresistance $̊ho$xx and Hall effect $̊ho$xy in MnSi between room temperature and 2.5K for magnetic field up to 9T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T
Keywords:
Magnetoresistance,Hall effect,Itinerant magnetism
Journal title:
Physica B: Condensed Matter
Year:
2009
Journal volume:
404
Month:
oct
Journal issue:
19
Pages contribution:
3163
Fulltext / DOI:
doi:10.1016/j.physb.2009.07.055
Print-ISSN:
0921-4526
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