Benutzer: Gast  Login
Titel:

Hall Effect and Magnetoresistance in {{MnSi}}

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Neubauer, A.; Pfleiderer, C.; Ritz, R.; Niklowitz, P. G.; B̈oni, P.
Abstract:
We report the transverse magnetoresistance $̊ho$xx and Hall effect $̊ho$xy in MnSi between room temperature and 2.5K for magnetic field up to 9T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T
Stichworte:
Magnetoresistance,Hall effect,Itinerant magnetism
Zeitschriftentitel:
Physica B: Condensed Matter
Jahr:
2009
Band / Volume:
404
Monat:
oct
Heft / Issue:
19
Seitenangaben Beitrag:
3163
Volltext / DOI:
doi:10.1016/j.physb.2009.07.055
Print-ISSN:
0921-4526
 BibTeX