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Title:

Analytical study of drift velocity in N-type silicon nanowires

Document type:
Konferenzbeitrag
Author(s):
Fallahpour, A.H.; Ahmadi, M.T.; Ismail, R.
Abstract:
Print Request Permissions My Projects is in the process of migrating to a new online community. Click icon for details. The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is fo...     »
Book / Congress title:
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Congress (additional information):
Kuala Lumpur, Malaysia, 15-16 July 2009
Publisher:
IEEE Xplore Digital Library
Year:
2009
Quarter:
3. Quartal
Year / month:
2009-07
Month:
Jul
Pages:
252-254
Print-ISBN:
978-1-4244-4952-1
E-ISBN:
978-1-4244-4952-1
Language:
en
Fulltext / DOI:
doi:10.1109/ASQED.2009.5206261
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5206261
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