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Titel:

Analytical study of drift velocity in N-type silicon nanowires

Dokumenttyp:
Konferenzbeitrag
Autor(en):
Fallahpour, A.H.; Ahmadi, M.T.; Ismail, R.
Abstract:
Print Request Permissions My Projects is in the process of migrating to a new online community. Click icon for details. The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is fo...     »
Kongress- / Buchtitel:
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Kongress / Zusatzinformationen:
Kuala Lumpur, Malaysia, 15-16 July 2009
Verlag / Institution:
IEEE Xplore Digital Library
Jahr:
2009
Quartal:
3. Quartal
Jahr / Monat:
2009-07
Monat:
Jul
Seiten:
252-254
Print-ISBN:
978-1-4244-4952-1
E-ISBN:
978-1-4244-4952-1
Sprache:
en
Volltext / DOI:
doi:10.1109/ASQED.2009.5206261
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5206261
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