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Titel:

Analytical Study of Carriers in Silicon Nanowires

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Ahmadi, M.R.; Fallahpour, A.H.; Allahdadian, J.; Ismail, R.
Abstract:
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenera...     »
Stichworte:
Silicon Nanowire, Carrier Transport, carrier Velocity, Nanowire Transistor
Zeitschriftentitel:
MASAUM Journal of Basic and Applied Sciences Vol.1, No. 2
Jahr:
2009
Jahr / Monat:
2009-09
Quartal:
3. Quartal
Monat:
Sep
Sprache:
en
WWW:
http://www.researchgate.net/publication/260835448_._Analytical_Study_of_Carriers_in_Silicon_NanoWires
Verlag / Institution:
Research Gate
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