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Title:

Analysis of the hysteretic behavior of silicon nanowire transistors

Document type:
Zeitschriftenaufsatz
Author(s):
Fahem, Z.; Csaba, G.; Erlen, C.M.; Lugli, P.; Weber, W.M.; Geelhaar, L.; Riechert, H.
Abstract:
We e present a combined experimental and theoretical analysis of the transport properties of silicon nanowire (NW) transistors. The NWs are grown by catalytic chemical vapour deposition and are later deposited on pre-patterned oxidized silicon substrates that provide the device source and drain electrodes. A back gate configuration is used for our study. Through a controlled nickel diffusion, parts of the nominally undoped NWs are turned into nickel silicide NWs. thus providing a direct metallic...     »
Journal title:
physica status solidi (c) Special Issue: 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS-15) Volume 5, Issue 1, pages 27
Journal title abbreviation:
PSS
Year:
2008
Year / month:
2008-01
Quarter:
1. Quartal
Month:
Jan
Pages contribution:
27-30
Language:
en
Fulltext / DOI:
doi:10.1002/pssc.200776578
WWW:
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200776578/abstract
Format:
Text
Ingested:
24.01.2008
Last change:
24.01.2008
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