Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects

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Document type:: Zeitschriftenaufsatz
Author(s):: Huq, Tahmida N.; Lee, Lana C.; Eyre, Lissa; Li, Weiwei; Jagt, Robert A.; Kim, Chaewon; Fearn, Sarah; Pecunia, Vincenzo; Deschler, Felix; MacManus‐Driscoll, Judith L.; Hoye, Robert L. Z.
Title:: Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects
Journal title:: Advanced Functional Materials
Year:: 2020
Journal volume:: 30
Journal issue:: 13
Pages contribution:: 1909983
Fulltext / DOI:: doi:10.1002/adfm.201909983
Publisher:: Wiley
E-ISSN:: 1616-301X1616-3028
Date of publication:: 01.03.2020
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