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Title:

Performance of an Ultra Low Inductance GaN Half Bridge Switching Cell with Substrate Integrated Bare Dies

Document type:
Konferenzbeitrag
Contribution type:
Textbeitrag / Aufsatz
Author(s):
Dechant, E.; Seliger, N.; Kennel, R.
Abstract:
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance give...     »
Book / Congress title:
Konferenzband zur PCIM2019
Date of congress:
07.-09. 05. 2019
Year:
2019
Quarter:
2. Quartal
Year / month:
2019-05
Month:
May
Reviewed:
ja
Language:
en
Semester:
SS 19
TUM Institution:
Lehrstuhl für Elektrische Antriebssysteme und Leistungselektronik
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