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Titel:

Performance of an Ultra Low Inductance GaN Half Bridge Switching Cell with Substrate Integrated Bare Dies

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Textbeitrag / Aufsatz
Autor(en):
Dechant, E.; Seliger, N.; Kennel, R.
Abstract:
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance give...     »
Kongress- / Buchtitel:
Konferenzband zur PCIM2019
Datum der Konferenz:
07.-09. 05. 2019
Jahr:
2019
Quartal:
2. Quartal
Jahr / Monat:
2019-05
Monat:
May
Reviewed:
ja
Sprache:
en
Semester:
SS 19
TUM Einrichtung:
Lehrstuhl für Elektrische Antriebssysteme und Leistungselektronik
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