Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment

Titel:: Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment
Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: S. Karl, S. Sprengel and M.-C. Amann
Zeitschriftentitel:: Semiconductor Science and Technology
Jahr:: 2016
Band / Volume:: 31
Heft / Issue:: 12
Seitenangaben Beitrag:: 125008
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