Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment

S. Karl, S. Sprengel and M.-C. Amann

Title:: Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment
Document type:: Zeitschriftenaufsatz
Author(s):: S. Karl, S. Sprengel and M.-C. Amann
Journal title:: Semiconductor Science and Technology
Year:: 2016
Journal volume:: 31
Journal issue:: 12
Pages contribution:: 125008
BibTeX