This work provides a comparative analysis of spin dynamics in direct- and indirect-gap bulk semiconductors. In particular, the data represent the first comprehensive magneto-optical pump-probe investigation of the dynamics of optically induced carrier spin polarisations in the indirect-gap semiconductor germanium. Data on selected direct-gap semiconductors support the present good understanding of spin dynamics of conduction band electrons in those materials. In germanium, unlike in direct-gap semiconductors, long-lived hole spin coherence is observed. In addition, the comparatively complex structure of the indirect conduction band minimum impacts electron spin precession and decoherence. The data elucidate fundamental questions on orientation and readout of carrier spins via indirect optical transitions.
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This work provides a comparative analysis of spin dynamics in direct- and indirect-gap bulk semiconductors. In particular, the data represent the first comprehensive magneto-optical pump-probe investigation of the dynamics of optically induced carrier spin polarisations in the indirect-gap semiconductor germanium. Data on selected direct-gap semiconductors support the present good understanding of spin dynamics of conduction band electrons in those materials. In germanium, unlike in direct-gap s...
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