A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency fa noise source. Results of phase noise measurements are compared with calculated data and agree within \$\textbackslashpm5\$ dB     «

A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency fa noise source. Results of phase noise measurements are compared with calculated data a...     »