A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency fa noise source. Results of phase noise measurements are compared with calculated data and agree within \$\textbackslashpm5\$ dB
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A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency fa noise source. Results of phase noise measurements are compared with calculated data a...
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