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Title:

4H-SiC Lateral Magnetotransistor with Sub-Microtesla In-Plane Magnetic Field Detectivity

Document type:
Zeitschriftenaufsatz
Author(s):
Okeil, H.; Wachutka, G.
Abstract:
In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching 960 μA/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/√Hz is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify ele...     »
Keywords:
MEMS; semiconductors; 4H-SiC; magnetotransistor; microtesla; tesla; CMOS; DMOS; BCD; Bipolar; magnetic fields; detectivity; noise; 273; TCAD; plasma; modulation; sensor; circuits; WBG; chip; SRH; measurement; vertical current path; electron hole plasma; trajectorie; Transduction; simulation; sensor; differential collector; galvanomagnetic; Sentaurus; c-axis; Okeil, H.; Wachutka, G.; high sensitivity; experimental; bandwidth 0,25 Hz to 26 Hz
Dewey Decimal Classification:
620 Ingenieurwissenschaften
Journal title:
IEEE Electron Device Letters
Year:
2024
Year / month:
2024-09
Quarter:
3. Quartal
Pages contribution:
1-1
Language:
en
Fulltext / DOI:
doi:10.1109/led.2024.3456752
WWW:
https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=10669586
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Print-ISSN:
0741-3106
E-ISSN:
1558-0563
Date of publication:
01.01.2024
Copyright statement:
This work is licensed under a Creative Commons Attribution 4.0 Licence. For more information, see https://creativecommons.org/licenses/by/4.0/
TUM Institution:
CIT, EE, Professorship of Microsensors and Actuators; (Chair of Physics of Electrotechnology)
Ingested:
22.10.2024
Last change:
22.10.2024
CC license:
by, http://creativecommons.org/licenses/by/4.0
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