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Title:

4H–SiC Vertical Magnetotransistor with Microtesla Detectivity up to 500 °C

Document type:
Zeitschriftenaufsatz
Author(s):
Okeil, H.; Wachutka, G.
Abstract:
In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC vertical magnetotransistor over a wide range of temperatures, ranging from room temperature up to 500 °C. The sensor is realized using the ion-implanted wells of a wafer-scale 4H–SiC Bipolar-CMOS-DMOS technology. We measure and analyze the sensor's DC characteristics, magnetic sensitivity, linearity, and noise performance and determine the achievable magnetic detectivity, which lies in the low μT/ √ Hz re...     »
Keywords:
magnetic field; 4H-SiC; magnetotransistor; high temperature; 500°C; ion; ion weels; wafer-scale; CMOS; DMOS; bipolar; measurement; DC; sensor; magnetic sensitivity; linearity; noise; detectivity; TCAD; simulation; performance; MEMS; time-dependent; GaN-on-GaN; conductivity; diode; microtesla; magnetotransistor; Okeil, H.; Wachutka, G.; semiconductor; carbon; Monte Carlo; under zero; high voltage; aluminium; ionisation; ionization; moleküle; frequenz; Fraue...     »
Dewey Decimal Classification:
620 Ingenieurwissenschaften
Journal title:
Applied Physics Letters
Year:
2024
Journal volume:
124
Journal issue:
124/19
Pages contribution:
192101
Fulltext / DOI:
doi:10.1063/5.0189054
WWW:
https://pubs.aip.org/aip/apl/article/124/19/192101/3289201/4H-SiC-vertical-magnetotransistor-with-microtesla
Publisher:
AIP Publishing
E-ISSN:
0003-69511077-3118
Status:
Verlagsversion / published
Date of publication:
06.05.2024
Copyright statement:
© 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/) Hesham Okeil: Conceptualization (lead); Data curation (lead); Investigation (lead); Methodology (lead); Writing – original draft (lead); Writing – review & editing (lead). Gerhard Wachutka: Funding acquisition (lead); Resources (lead); Supervision (lead); Writing – original draft (supporting); Writing – review & editing (supporting). The data that support the findings of this study are available from the corresponding author upon reasonable request.
TUM Institution:
CIT, EE, Professorship of Microsensors and Actuators; (Chair of Physics of Electrotechnology)
Ingested:
22.10.2024
Last change:
22.10.2024
CC license:
by, http://creativecommons.org/licenses/by/4.0
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