High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures

We report on the development of a 600 °C withstanding low-noise apparatus, which enables high-throughput magnetic-field-dependent characterization of semiconductor devices bonded to a ceramic substrate at very high temperatures. A novel and simple method for electrically contacting metal pads on the ceramic substrate is developed, which allows contacting many metal pads simultaneously in limited space. The apparatus can be used for a variety of high-temperature experiments such as studying galvanomagnetic transport effects in devices and the characterization of SiC or GaN magnetic field sensors at very high temperatures. Furthermore, it can be used for performing very high-temperature die-attach processes. The apparatus has been successfully used to resolve magnetic-field-dependent current changes in a SiC pn diode ranging into the ppm scale at 500 °C.     «

We report on the development of a 600 °C withstanding low-noise apparatus, which enables high-throughput magnetic-field-dependent characterization of semiconductor devices bonded to a ceramic substrate at very high temperatures. A novel and simple method for electrically contacting metal pads on the ceramic substrate is developed, which allows contacting many metal pads simultaneously in limited space. The apparatus can be used for a variety of high-temperature experiments such as studying galva...     »