Buechler, J.; Kasper, E.; Luy, J. F.; Russer, P.; Strohm, K. M.
Abstract:
Planar oscillators on highly insulating Si substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from Si MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained
Stichworte:
microwave integrated circuits, Si, microwave oscillators, EHF, MIC, MM-wave IC, millimetre wave circuits, IMPATT diode, IMPATT diodes, 200 mW, 4.5 percent, 70 to 73 GHz, disc resonator, highly insulating Si substrate, maximum CW output power, planar microwave oscillator, Si MBE material
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