User: Guest  Login
Sort by:
and:
next

Semiconductor chip with integrated via
2014
14
Weber, W.M. ; Heinzig, A. ; Trommer, J. ; Grube, M. ; Kreupl, F. ; Mikolajick, T.
Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology
IEEE Transactions on Nanotechnology
2014
Volume: 13 , Issue: 6
1020 - 1028
D. Sekar, B. Bateman, U. Raghuram, S. Bowyer, *Y. Bai, M. Calarrudo, P. Swab, J. Wu, S. Nguyen, N. Mishra, R. Meyer, M. Kellam, B. Haukness, C. Chevallier, * H. Wu, * H. Qian, ** F. Kreupl and G. Bronner
Technology and Circuit Optimization of Resistive RAM for Low-Power, Reproducible Operation
IEDM
International Electron Devices Meeting (IEDM)
IEEE
2014
Franz Kreupl
Carbon Memory
Memory Technologies
2014
ITRS
Carbon Memory Assessment
2014
50
KREUPL FRANZ, DE ; MAKALA RAGHUVEER S, US ; SANDISK 3D LLC, US ; SEKAR DEEPAK CHANDRA, US
[EN] Bottom electrodes for use with metal oxide resistivity switching layers
2014
Hedler, Harry, Irsigler, Roland, Kreupl, Franz
Verfahren zum Herstellen einer Durchkontaktierung in einer Schicht und Anordnung mit einer Schicht mit Durchkontaktierung
2014
18
LEE SANG HYUN [KR]; DUNGA MOHAN [IN]; HIGASHITANI MASAAKI [JP]; PHAM TUAN [US]; KREUPL FRANZ [DE]
P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
2014
Happ; Thomas (Dresden, DE), Kreupl; Franz (Munich, DE), Philipp; Jan Boris (Munich, DE), Majewski; Petra (Munich, DE)
Resistive memory devices with improved resistive changing elements
2014
Kreupl; Franz (Munchen, DE), Costa; Xiying (San Jose, CA), Kai; James (Santa Clara, CA), Makala; Raghuveer S. (Sunnyvale, CA)
Memory cell with resistance-switching layers
2014
Sort by:
and:
next