A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator

In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.     «

In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscill...     »