This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6 dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.     «

This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies b...     »