Time domain characterization of planar microwave transformers using the SCN-TLM method
Abstract:
This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy silicon substrate can be neglected up to 5 GHz
Stichworte:
time-domain analysis, transmission line matrix methods, planar waveguides, UHF integrated circuits, losses, electrical properties, MMIC power amplifiers, UHF power amplifiers, conductor losses, time domain characterization, SCN-TLM method, planar microwave transformers, 1 to 5 GHz, monolithic RF power amplifiers
Kongress- / Buchtitel:
Microwave Symposium Digest., 2000 IEEE MTT-S International
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