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- Dokumenttyp:
- Konferenzbeitrag
- Autor(en):
- Felgentreff, T.; Olbrich, G.; Russer, P.
- Titel:
- Noise parameter modeling of HEMTs with resistor temperature noise sources
- Abstract:
- We present a new model to describe the millimeter wave noise performance of MESFETs and HEMTs. The model is used to extrapolate the noise parameters in frequency range and to describe the noise behaviour over a wide range of bias points. The model is based on three uncorrelated noise sources located at the intrinsic transistor, which are assumed to show white spectral behaviour. The parameters of the model are determined from noise parameter measurements. The noise parameter extraction technique... »
- Stichworte:
- equivalent circuits, semiconductor device models, HEMTs, semiconductor device noise, circuit simulation programs, high electron mobility transistors, MESFETs, millimeter wave noise performance, MM-wave FETs, noise parameter extraction technique, noise parameter modeling, pseudomorphic structures, resistor temperature noise sources, Schottky gate field effect transistors, solid-state microwave devices, thermal noise, white noise, white spectral behaviour
- Kongress- / Buchtitel:
- Microwave Symposium Digest, 1994., IEEE MTT-S International
- Jahr:
- 1994
- Seiten:
- 853--856 vol.2
- Print-ISBN:
- 0149-645X
- Volltext / DOI:
- doi:10.1109/MWSYM.1994.335311
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