Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator
Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Anzill, W.; Goeller, T.; Kaertner, F. X.; Russer, P.; Buechler, J.
Abstract:
A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.