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Titel:

Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Anzill, W.; Goeller, T.; Kaertner, F. X.; Russer, P.; Buechler, J.
Abstract:
A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.
Stichworte:
time-domain analysis, semiconductor device models, microwave oscillators, output power, oscillation frequency, simulation, 7 GHz, IMPATT diodes, 20 mW, 73 GHz, DC bias currents, fast time domain oscillator simulations, integrated double drift diode IMPATT oscillator, quasistatic IMPATT diode model, self-consistent simulation
Zeitschriftentitel:
Electronics Letters
Jahr:
1990
Band / Volume:
26
Heft / Issue:
20
Seitenangaben Beitrag:
1697--1698
Volltext / DOI:
doi:10.1109/ULTSYM.1990.171433
Print-ISSN:
0013-5194
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