Two silicon monolithic circuits, a 90-GHz-band monolithic integrated Schottky diode receiver fabricated on a highly insulating silicon substrate, and a planar W-band oscillator, hybrid integrated on a highly insulating silicon substrate with double drift region IMPATT diodes, are presented. The receiver consists of the monolithic Schottky diode and a planar antenna structure on one silicon chip. The receiver sensitivity is 65 μW/cm. The receiver antenna half-power beamwidth is 23$^\textrm\textbackslashcirc\$$ and the side-lobe attenuation is 12 dB. The continuous-wave oscillator output power is greater than 20 mW and the efficiency is more than 1%. The hybrid IMPATT oscillators show good characteristics for low current densities. However, for higher current densities bias oscillations occur and the microwave power nearly vanishes     «

Two silicon monolithic circuits, a 90-GHz-band monolithic integrated Schottky diode receiver fabricated on a highly insulating silicon substrate, and a planar W-band oscillator, hybrid integrated on a highly insulating silicon substrate with double drift region IMPATT diodes, are presented. The receiver consists of the monolithic Schottky diode and a planar antenna structure on one silicon chip. The receiver sensitivity is 65 μW/cm. The receiver antenna half-power beamwidth is 23$^\textrm\textba...     »

monolithic integrated circuits, microwave integrated circuits, receiving antennas, receivers, elemental semiconductors, Si, silicon, microwave oscillators, sensitivity, transmitters, millimeter-wave circuits, IMPATT diodes, 20 mW, 90 GHz, bias oscillations, continuous-wave oscillator output power, current densities, double drift region IMPATT diodes, hybrid IMPATT oscillators, monolithic integrated Schottky diode receiver, planar antenna structure, planar W-band oscillator, receiver antenna half-power beamwidth, Schottky-barrier diodes, side-lobe attenuation     «

monolithic integrated circuits, microwave integrated circuits, receiving antennas, receivers, elemental semiconductors, Si, silicon, microwave oscillators, sensitivity, transmitters, millimeter-wave circuits, IMPATT diodes, 20 mW, 90 GHz, bias oscillations, continuous-wave oscillator output power, current densities, double drift region IMPATT diodes, hybrid IMPATT oscillators, monolithic integrated Schottky diode receiver, planar antenna structure, planar W-band oscillator, receiver antenna half...     »