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Titel:

Modeling of silicon heterojunction solar cells

Dokumenttyp:
Konferenzbeitrag
Autor(en):
Luppina, P.; Lugli, P.; Goodnick, S. M.
Abstract:
Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of...     »
Stichworte:
amorphous semiconductors, defect states, indium compounds, semiconductor device models, silicon, solar cells, thermionic emission, tin compounds, ITO, ITO contact layer, ITO emitter contact, Si, a-Si barriers, band offsets, barrier heights, crystalline Si-amorphous Si heterojunction solar cells, defect states, open circuit voltage, physical simulation, thermionic emission, Heterojunctions, Indium tin oxide, Integrated circuit modeling, Photonic band gap, Photovoltaic cells, Semiconductor process...     »
Kongress- / Buchtitel:
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Kongress / Zusatzinformationen:
New Orleans LA USA, 14-19 June 2015 2015-06
Verlag / Institution:
IEEE Xplore Digital Library
Jahr:
2015
Quartal:
2. Quartal
Jahr / Monat:
2015-06
Monat:
Jun
Seiten:
1--6
Sprache:
en
Volltext / DOI:
doi:10.1109/PVSC.2015.7356049
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7356049&newsearch=true&queryText=Modeling+of+silicon+heterojunction+solar+cells
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