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Titel:

Carbon nanotube thin-film transistors featuring transfer-printed metal electrodes and a thin, self-grown aluminum oxide gate dielectric

Dokumenttyp:
Konferenzbeitrag
Autor(en):
Haeberle, T.; Loghin, F.; Zschieschang, U.; Klauk, H.; Lugli, P.
Abstract:
We report on a novel fabrication scheme to define metal source and drain contacts for short-channel thin-film transistors utilizing a purely additive transfer-printing process. We demonstrate the viability of this approach by realizing carbon nanotube thin-film transistors featuring a very thin aluminum oxide gate dielectric The active layer of the transistors is spray-deposited from an aqueous carbon-nanotube suspension with 90% semiconducting content. Full gate control is demonstrated for gate...     »
Stichworte:
III-V semiconductors, aluminium compounds, carbon nanotube field effect transistors, electrodes, nanofabrication, thin film transistors, three-dimensional printing, AlN, additive transfer-printing process, aqueous carbon-nanotube suspension, carbon nanotube thin-film transistors, drain contacts, fabrication scheme, full gate control, metal source, short-channel thin-film transistors, thin self-grown aluminum oxide gate dielectric, transfer-printed metal electrodes, Dielectrics, Logic gates, Meta...     »
Kongress- / Buchtitel:
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Kongress / Zusatzinformationen:
Rome, Italy, 27-30 July 2015 2015-07
Verlag / Institution:
IEEE Xplore Digital Library
Jahr:
2015
Quartal:
3. Quartal
Jahr / Monat:
2015-07
Monat:
Jul
Seiten:
160--163
Sprache:
en
Volltext / DOI:
doi:10.1109/NANO.2015.7388946
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7388946&queryText=Carbon+nanotube+thin-film+transistors+featuring+transfer-printed+metal+electrodes+and+a+thin,+self-grown+aluminum+oxide+gate+dielectric&newsearch=true
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