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Title:

High speeds in a single chip

Document type:
Zeitschriftenaufsatz
Author(s):
Kasper, E.; Kissinger, D.; Russer, P.; Weigel, R.
Abstract:
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and monolithic integrated millimeter-wave circuits based on these HBTs have been developed by several groups. As this paper shows in the overview, the combination of active devices with passive planar structures, including antenna elements, allows single-chip realizations of complete millimeter-wave front-ends.
Keywords:
SiGe, integrated circuit technology, semiconductor materials, active devices, frequency, Ge-Si alloys, Germanium silicon alloys, HBT, heterojunction bipolar transistors, Millimeter wave communication, Millimeter wave integrated circuits, Millimeter wave technology, millimeter wave transistors, millimeter-wave front-ends, MIMIC, monolithic integrated millimeter-wave circuits, passive planar structures, photonic band gap, Silicon germanium
Journal title:
IEEE Microwave Magazine
Year:
2009
Journal volume:
10
Month:
December
Journal issue:
7
Pages contribution:
28--33
Fulltext / DOI:
doi:10.1109/MMM.2009.934691
Print-ISSN:
1527-3342
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