The transmission line matrix (TLM) method is used for modeling of distributed active nonlinear domains, embedded in planar microwave circuits. In this approach the nonlinearities are described by lumped elements connected to the nodes of a resistive TLM network. With this approach the transient as well as the steady-state behavior of nonlinear distributed active elements can be evaluated. The model of a distributed semiconductor diode is discussed. The distributed barrier is modeled by a resistive region. The physical cutoff characteristics of the semiconducting region are considered by lumped capacitors included in the TLM network. For an oscillator with a distributed diode, the time history and the field contribution at different instants of time are given
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The transmission line matrix (TLM) method is used for modeling of distributed active nonlinear domains, embedded in planar microwave circuits. In this approach the nonlinearities are described by lumped elements connected to the nodes of a resistive TLM network. With this approach the transient as well as the steady-state behavior of nonlinear distributed active elements can be evaluated. The model of a distributed semiconductor diode is discussed. The distributed barrier is modeled by a resisti...
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