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Title:

Coplanar Monolithic Silicon Impatt Transmitter

Document type:
Konferenzbeitrag
Author(s):
Buechler, J.; Strohm, K. M.; Luy, J. F.; Goeller, T.; Sattler, S.; Russer, P.
Abstract:
A coplanar W-band transmitter incorporating a monolithically integrated IMPATT diode in a self radiating slot line resonator has been designed and fabricated with molecular beam epitaxy (MBE) on a high resistivity silicon substrate. A pulsed radiated output power of 7 mW at 109 GHz was measured.
Book / Congress title:
21st European Microwave Conference
Volume:
1
Year:
1991
Pages:
352--357
Fulltext / DOI:
doi:10.1109/MWSYM.1991.147110
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