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- Title:
Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator
- Document type:
- Zeitschriftenaufsatz
- Author(s):
- Anzill, W.; Goeller, T.; Kaertner, F. X.; Russer, P.; Buechler, J.
- Abstract:
- A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.
- Keywords:
- time-domain analysis, semiconductor device models, microwave oscillators, output power, oscillation frequency, simulation, 7 GHz, IMPATT diodes, 20 mW, 73 GHz, DC bias currents, fast time domain oscillator simulations, integrated double drift diode IMPATT oscillator, quasistatic IMPATT diode model, self-consistent simulation
- Journal title:
- Electronics Letters
- Year:
- 1990
- Journal volume:
- 26
- Journal issue:
- 20
- Pages contribution:
- 1697--1698
- Fulltext / DOI:
- doi:10.1109/ULTSYM.1990.171433
- Print-ISSN:
- 0013-5194
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