Buechler, J.; Kasper, E.; Luy, J. F.; Russer, P.; Strohm, K. M.
Abstract:
A planar oscillator integrated on silicon substrate with a double drift region IMP ATT diode and a monolithic integrated Schottky diode receiver including a planar antenna on one silicon chip for the 90 GHz band are presented. The maximum CW output power of the oscillator is 200 mW at 73 GHz with an efficiency of 4.5 %. The experimental receiver sensitivity is 65 ¿V/¿Wcm-2, the receiver antenna half¿power beamwidth is 23$^\textrm\textbackslashcirc\$$.