Near-Field Measurement and Modelling of Stochastic Fields in EMI

In the context of modern computer-aided manufacturing accurate EMI modeling is required to design systems in a way that they comply with EMC standards. The modeling of stochastic fields differs from the modeling of deterministic fields since we have to consider the correlation between any pair of field samples. We present a methodology for the numerical computation of noisy electromagnetic fields excited by spatially distributed noise sources with arbitrary spatial correlation. Near field characterization of the EMI radiated by a component is aimed to provide the information for modeling of EMI field distribution produced by this component when embedded into some system unit. Due to the equivalence principle an equivalent source distribution determined by amplitude and phase scanning of the tangential electric or magnetic field on a surface enclosing the radiating structure is equivalent to the internal sources and allows to model the environmental field. State of the art comprises electromagnetic interference (EMI) near-field scanners, scanning the electric or magnetic near-field amplitude distribution.     «

In the context of modern computer-aided manufacturing accurate EMI modeling is required to design systems in a way that they comply with EMC standards. The modeling of stochastic fields differs from the modeling of deterministic fields since we have to consider the correlation between any pair of field samples. We present a methodology for the numerical computation of noisy electromagnetic fields excited by spatially distributed noise sources with arbitrary spatial correlation. Near field charac...     »