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- Title:
A switched-LNA in 0.18 $\mu$m CMOS for Bluetooth applications
- Document type:
- Konferenzbeitrag
- Author(s):
- Krug, F.; Russer, P.; Beffa, F.; Bachtold, W.; Lott, U.
- Abstract:
- A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 μm CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (\textbackslashtextbarS21\textbackslashtextbar2) of 7 dB/-17 dB with a noise figure (NF) of 3 dB in a 50 Ω measurement environment. The power consumption is 7.6 mW from a 1.8 V supply. The die area of the LN... »
- Keywords:
- 0.18 micron, 1.8 V, 150 fF, 2.45 GHz, 3 dB, 7.6 mW, Bluetooth, Bluetooth applications, CMOS analogue integrated circuits, CMOS process, fully integrated mixer stage, integrated Bluetooth receiver, low-noise amplifier, radio receivers, RF CMOS technology, switched networks, switched-LNA, UHF amplifiers, UHF integrated circuits
- Book / Congress title:
- Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
- Year:
- 2003
- Pages:
- 80--83
- Fulltext / DOI:
- doi:10.1109/SMIC.2003.1196674
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