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Title:

Flip-chip bonded Si Schottky diode sampling circuits for high speed demultiplexers

Document type:
Konferenzbeitrag
Author(s):
Choi, Jung Han; Weiske, C. J.; Olbrich, G. R.; Russer, P.
Abstract:
This paper presents a Si Schottky diode sampling circuit for demultiplexer using flip-chip technology on alumina substrate (Al/sub 2/O/sub 3/). In order to design circuits, very high speed Si Schottky diodes, having cutoff frequency of 750 GHz, were modeled using the Root diode model and flip-chip interconnection was simulated using 3 dimensional electromagnetic simulator, HFSS.
Keywords:
Coplanar waveguides, demultiplexing equipment, elemental semiconductors, Sampling methods, Schottky diodes, Si, silicon, Al/sub 2/O/sub 3/, alumina substrate, Circuit simulation, flip-chip devices, Integrated circuit interconnections, Root diode model, 750 GHz, Bonding, Cutoff frequency, Electromagnetic modeling, flip-chip bonding, HEMTs, HFSS, high-speed demultiplexer, Logic circuits, Si Schottky diode sampling circuit, signal processing equipment, three-dimensional electromagnetic simulation
Book / Congress title:
IEEE MTT-S International Microwave Symposium Digest, 2003
Volume:
3
Year:
2003
Month:
June
Pages:
1515--1518 vol.3
Fulltext / DOI:
doi:10.1109/MWSYM.2003.1210424
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