We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 \$\textbackslashpm\$ 0.4 dB m while the measured single sideband phase noise is less than -105 dBc/Hz at 1 MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency band. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.     «

We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 \$\textbackslashpm\$ 0.4 dB m while the measured single sideband phase noise is less than -105 dBc/Hz at 1 MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this f...     »