By combining the advanced methods of silicon molecular beam epitaxy (Si-MBE) and X-ray lithography, a technology for the fabrication of monolithic integrated millimeter wave circuits on high resistivity Si was developed. With these techniques simple millimeter wave transmitter and receiver circuits have been fabricated. The receiver chip with a coplanar Schottky diode as detector element and a microstrip antenna with 36 radiating elements shows a sensitivity of 65 μV/μW/cm2. The transmitter oscillator with a double drift IMPATT diode made by Si-MBE emits maximum CW output power of 200 mW at 73 GHz     «

By combining the advanced methods of silicon molecular beam epitaxy (Si-MBE) and X-ray lithography, a technology for the fabrication of monolithic integrated millimeter wave circuits on high resistivity Si was developed. With these techniques simple millimeter wave transmitter and receiver circuits have been fabricated. The receiver chip with a coplanar Schottky diode as detector element and a microstrip antenna with 36 radiating elements shows a sensitivity of 65 μV/μW/cm2. The transmitter osci...     »